Перегляд за автором "Ivanov, V.I."

Сортувати за: Порядок: Результатів:

  • Out-of-plane optical transmittance of 2D photonic macroporous silicon structures 
    Karachevtseva, L.A.; Glushko, A.E.; Ivanov, V.I.; Lytvynenko, O.O.; Onishchenko, V.F.; Parshin, K.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical transmission spectra of 2D photonic macroporous silicon structures are investigated. The absolute bandgap for high values of the out-of-plane component kz is situated between the second and third photonic bands. ...
  • Photoconductivity in macroporous silicon with regular structure of macropores 
    Ivanov, V.I.; Karachevtseva, L.A.; Karas, N.I.; Lytvynenko, O.A.; Parshin, K.A.; Sachenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon ...
  • Physical properties of layered FeIn₂Se₄ single crystals 
    Boledzyuk, V.B.; Kovalyuk, Z.D.; Kudrynskyi, Z.R.; Ivanov, V.I.; Shevchenko, A.D. (Functional Materials, 2016)
    Single crystals of FeIn₂Se₄ having a hexagonal structure and mirror-like cleaved surfaces were grown by the Bridgman method. X-ray spectroscopic analysis of the grown crystals was carried out. The morphology of their surface ...
  • Structure and electrical properties of In₂Se₃Mn layered crystals 
    Kaminskii, V.M.; Kovalyuk, Z.D.; Zaslonkin, A.V.; Ivanov, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 ...